suf30g & suf30j vishay general semiconductor document number: 88754 revision: 20-aug-07 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 ultrafast plastic rectifier features ? glass passivated chip junction ? ideal for printed circuit boards ? ultrafast reverse recovery time ? low switching losses, high efficiency ? low leakage current ? high forward surge capability ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. mechanical data case: p600 epoxy meets ul 94v-0 flammability rating t erminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: color band denotes cathode end primary characteristics i f(av) 3.0 a v rrm 400 v, 600 v i fsm 80 a t rr 35 ns v f 1.8 v, 2.0 v t j max. 150 c case style p600 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol suf30g suf30j unit maximum repetitive peak reverse voltage v rrm 400 600 v maximum rms voltage v rms 280 420 v maximum dc blocking voltage v dc 400 600 v maximum average forward rectified current, 0.200" (5.0 mm) lead length at t a = 60 c i f(av) 3.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 80 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
suf30g & suf30j vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88754 revision: 20-aug-07 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) thermal resistance from junction to ambient at 0.200" (5.0 mm) lead length with both leads attached to heat sink ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol suf30g suf30j unit maximum instantaneous forward voltage (1) 3.0 a v f 1.8 2.0 v maximum peak reverse current at rated peak reverse voltage t a = 25 c t a = 100 c i r 10 100 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 35 ns typical junction capacitance 4.0 v, 1 mhz c j 60 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol suf30g suf30j unit typical thermal resistance (1) r ja 25 c/w ordering information (example) preferred p/n unit weight (g ) preferred package code base quantity delivery mode suf30j-e3/54 1.834 54 800 13" diameter paper tape and reel suf30j-e3/73 1.834 73 300 ammo pack packaging figure 1. forward current derating curve 20 40 60 8 0 100 120 140 160 0 0.5 1.0 1.5 2.0 2.5 3.0 resisti v e or ind u cti v e load a v erage for w ard re ctified c u rrent (a) am b ient temperat u re (c) 0.7 8 x 0.7 8 x 0.04 " (20 x 20 x 1 mm) copper plate 0.200 " (5 mm) lead length figure 2. maximum non-repetitive peak forward surge current 1 10 100 1 10 100 nu m b er of c y cles at 60 hz peak for w ard s u rge c u rrent (a) t a = 60 c 8 .3 ms single half sine- w a v e
suf30g & suf30j vishay general semiconductor document number: 88754 revision: 20-aug-07 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 figure 3. typical instantaneous forward characteristics figure 4. typical reverse leakage characteristics figure 5. typical instantaneous forward characteristics instantaneo u s for w ard c u rrent (a) instantaneo u s for w ard v oltage ( v ) suf30g 1.0 0. 8 0.6 0.4 0.2 1.2 1.4 1.6 1. 8 2.0 0.01 0.1 1 10 100 t j = 100 c t j = 150 c t j = 125 c t j = 25 c 0.01 0.1 1 10 100 1000 0 20 40 60 8 0 100 percent of peak re v erse v olta g e ( % ) t j = 150 c t j = 100 c t j = 125 c t j = 25 c suf30g instantaneo u s re v erse leakage c u rrent ( a) 0.01 0.1 1 10 100 1.0 0. 8 0.6 0.4 0.2 1.2 1.4 1.6 1. 8 instantaneo u s for w ard c u rrent (a) instantaneo u s for w ard v oltage ( v ) suf30j t j = 100 c t j = 150 c t j = 125 c t j = 25 c figure 6. typical reverse leakage characteristics figure 7. typical junction capacitance figure 8. typical trans ient thermal impedance 0 20 40 60 8 0 100 percent of peak re v erse v oltage ( % ) suf30j 0.01 0.1 1 10 100 1000 t j = 100 c t j = 150 c t j = 125 c t j = 25 c instantaneo u s re v erse leakage c u rrent ( a) 0.1 1 10 100 10 100 1 000 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p re v erse v olta g e ( v ) j u nction capacitance (pf) 0.01 0.1 1 10 100 0.1 1 10 100 t - p u lse d u ration ( s ) transient thermal impedance (c/ w )
suf30g & suf30j vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88754 revision: 20-aug-07 4 package outline dimensions in inches (millimeters) 0.052 (1.32) 0.04 8 (1.22) 0.360 (9.1) 0.340 ( 8 .6) dia. 1.0 (25.4) mi n . 0.360 (9.1) 0.340 ( 8 .6) 1.0 (25.4) mi n . p600
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